Infineon Technologies - IDC28D120T6MX1SA2

KEY Part #: K6439904

IDC28D120T6MX1SA2 Hinnakujundus (USD) [19939tk Laos]

  • 1 pcs$2.06688

Osa number:
IDC28D120T6MX1SA2
Tootja:
Infineon Technologies
Täpsem kirjeldus:
DIODE GEN PURP 1.2KV 50A WAFER.
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - Zener - massiivid, Transistorid - bipolaarsed (BJT) - üksikud, Elektrijuhi moodulid, Dioodid - Zener - üksikud, Dioodid - sillaldid, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - IGBT - üksikud and Transistorid - IGBT - massiivid ...
Konkurentsieelis:
We specialize in Infineon Technologies IDC28D120T6MX1SA2 electronic components. IDC28D120T6MX1SA2 can be shipped within 24 hours after order. If you have any demands for IDC28D120T6MX1SA2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDC28D120T6MX1SA2 Toote atribuudid

Osa number : IDC28D120T6MX1SA2
Tootja : Infineon Technologies
Kirjeldus : DIODE GEN PURP 1.2KV 50A WAFER
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 1200V
Praegune - keskmine puhastatud (Io) : 50A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 2.05V @ 50A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 10µA @ 1200V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : Die
Tarnija seadme pakett : Sawn on foil
Töötemperatuur - ristmik : -40°C ~ 175°C

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