RGF1BHE3/67A Hinnakujundus (USD) [506068tk Laos]
- 1 pcs$0.07309
- 6,000 pcs$0.06624
- Osa number:
- RGF1BHE3/67A
- Täpsem kirjeldus:
- DIODE GEN PURP 100V 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 100 Volt 150ns 30 Amp IFSM
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - massiivid, Türistorid - TRIAC-d, Transistorid - bipolaarsed (BJT) - massiivid, Dioodid - muutuva mahtuvusega (muutujad, varactors, Transistorid - IGBT - üksikud, Transistorid - programmeeritav unijunktsioon, Transistorid - bipolaarsed (BJT) - RF and Türistorid - SCR ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division RGF1BHE3/67A electronic components. RGF1BHE3/67A can be shipped within 24 hours after order. If you have any demands for RGF1BHE3/67A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGF1BHE3/67A Toote atribuudid
Osa number :
RGF1BHE3/67A
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 100V 1A DO214BA
Sari :
SUPERECTIFIER®
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
100V
Praegune - keskmine puhastatud (Io) :
1A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.3V @ 1A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
150ns
Praegune - vastupidine leke @ Vr :
5µA @ 100V
Mahtuvus @ Vr, F :
8.5pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-214BA
Tarnija seadme pakett :
DO-214BA (GF1)
Töötemperatuur - ristmik :
-65°C ~ 175°C
Viimased uudised
Samuti võite olla huvitatud
-
ES1D-E3/61T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO214AC. Rectifiers 1.0 Amp 200 Volt
-
US1M-E3/61T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1A DO214AC. Rectifiers 1.0 Amp 1000 Volt
-
ES2CHE3_A/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 2A DO214AA. Rectifiers 2A,150V,20ns SMB, UF Rect, SMD
-
ES2AHE3_A/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20ns SMB, UF Rect, SMD
-
ES2BHE3_A/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 2A DO214AA. Rectifiers 2A,100V,20ns SMB, UF Rect, SMD
-
MURS120HE3_A/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 2A DO214AA. Rectifiers 1A,200V,25ns SMB, UF Rect, SMD
Kuumad osad
- CN646 BK
- IRD3CH53DB6
- VS-20MQ100NPBF
- 1N4002GPEHE3/91
- RS1PBHM3/85A
- VS-30WQ03FNPBF
- SK36/TR13
- CD214A-B130LLF
- VS-50WQ06FNPBF
- CDBA320L-G
- VS-80EPF12PBF
- 1N4551A
- C2D05120E
- RB520S-30FTE61
- MBRB735-E3/45
- VS-20ETF04STRRPBF
- 1N1616A
- APT15D30KG
- SDP06S60
- RGP20JHE3/73
- R6100625XXYZ
- R6100230XXYZ
- UG1002-T
- STTH5R06G
- MURA240T3
- VS-31DQ05TR
- NUR460/L02,112
- MUR1510H
- CTLSH1-50M832DS BK
- SF34-TP
- RL251M-TP
- R5000-TP
- FR1007-AP
- STPS30170DJF-TR
- ESH3C-E3/9AT
- RB053L-30TE25
- RU 1CV
- ES3B-E3/9AT
- IMBD4148-HE3-08
- LS4154GS18
选择你的位置