EGL41CHE3_A/I Hinnakujundus (USD) [758794tk Laos]
- 1 pcs$0.04875
- Osa number:
- EGL41CHE3_A/I
- Täpsem kirjeldus:
- DIODE GEN PURP 150V 1A DO213AB. Rectifiers 1A,150V,50NS AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - üksikud, Dioodid - RF, Elektrijuhi moodulid, Transistorid - IGBT - massiivid, Transistorid - IGBT - üksikud, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - FET, MOSFET - massiivid and Transistorid - JFET-id ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division EGL41CHE3_A/I electronic components. EGL41CHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGL41CHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGL41CHE3_A/I Toote atribuudid
Osa number :
EGL41CHE3_A/I
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 150V 1A DO213AB
Sari :
Automotive, AEC-Q101, Superectifier®
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
150V
Praegune - keskmine puhastatud (Io) :
1A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1V @ 1A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
50ns
Praegune - vastupidine leke @ Vr :
5µA @ 150V
Mahtuvus @ Vr, F :
20pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-213AB, MELF (Glass)
Tarnija seadme pakett :
DO-213AB
Töötemperatuur - ristmik :
-65°C ~ 175°C
Viimased uudised
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