Vishay Semiconductor Diodes Division - BYG10Y-E3/TR3

KEY Part #: K6439845

BYG10Y-E3/TR3 Hinnakujundus (USD) [557770tk Laos]

  • 1 pcs$0.06631
  • 7,500 pcs$0.06010
  • 15,000 pcs$0.05595

Osa number:
BYG10Y-E3/TR3
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE AVALANCHE 1.6KV 1.5A. Rectifiers 1.5 Amp 1600 Volt
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - RF, Dioodid - RF, Transistorid - IGBT - massiivid, Türistorid - SCR, Transistorid - FET, MOSFET - RF, Dioodid - Zener - üksikud, Transistorid - JFET-id and Transistorid - bipolaarsed (BJT) - eelkallutatud m ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division BYG10Y-E3/TR3 electronic components. BYG10Y-E3/TR3 can be shipped within 24 hours after order. If you have any demands for BYG10Y-E3/TR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10Y-E3/TR3 Toote atribuudid

Osa number : BYG10Y-E3/TR3
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE AVALANCHE 1.6KV 1.5A
Sari : -
Osa olek : Active
Dioodi tüüp : Avalanche
Pinge - tagurpidi alalisvool (Vr) (max) : 1600V
Praegune - keskmine puhastatud (Io) : 1.5A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.15V @ 1.5A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 4µs
Praegune - vastupidine leke @ Vr : 1µA @ 1600V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AC, SMA
Tarnija seadme pakett : DO-214AC (SMA)
Töötemperatuur - ristmik : -55°C ~ 150°C

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