Vishay Semiconductor Diodes Division - S1BHE3_A/H

KEY Part #: K6434160

S1BHE3_A/H Hinnakujundus (USD) [977949tk Laos]

  • 1 pcs$0.03782
  • 7,200 pcs$0.02825

Osa number:
S1BHE3_A/H
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1A 100V 40A@8.3ms Single Die Auto
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - Zener - massiivid, Transistorid - bipolaarsed (BJT) - RF, Dioodid - Zener - üksikud, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - eriotstarbelised, Transistorid - IGBT - massiivid, Dioodid - RF and Transistorid - FET, MOSFET - massiivid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division S1BHE3_A/H electronic components. S1BHE3_A/H can be shipped within 24 hours after order. If you have any demands for S1BHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1BHE3_A/H Toote atribuudid

Osa number : S1BHE3_A/H
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 100V 1A DO214AC
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 1A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 1.8µs
Praegune - vastupidine leke @ Vr : 1µA @ 100V
Mahtuvus @ Vr, F : 12pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AC, SMA
Tarnija seadme pakett : DO-214AC (SMA)
Töötemperatuur - ristmik : -55°C ~ 150°C

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