BAV21WS-HE3-18 Hinnakujundus (USD) [2097832tk Laos]
- 1 pcs$0.01763
- 10,000 pcs$0.01631
- Osa number:
- BAV21WS-HE3-18
- Täpsem kirjeldus:
- DIODE GEN PURP 200V 250MA SOD323. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - RF, Türistorid - SCR - moodulid, Türistorid - SCR, Transistorid - FET, MOSFET - üksikud, Transistorid - IGBT-moodulid, Transistorid - FET, MOSFET - massiivid, Türistorid - DIAC-d, SIDAC-id and Transistorid - programmeeritav unijunktsioon ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division BAV21WS-HE3-18 electronic components. BAV21WS-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAV21WS-HE3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAV21WS-HE3-18 Toote atribuudid
Osa number :
BAV21WS-HE3-18
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 200V 250MA SOD323
Sari :
Automotive, AEC-Q101
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
200V
Praegune - keskmine puhastatud (Io) :
250mA (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.25V @ 200mA
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
50ns
Praegune - vastupidine leke @ Vr :
100nA @ 200V
Mahtuvus @ Vr, F :
1.5pF @ 0V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
SC-76, SOD-323
Tarnija seadme pakett :
SOD-323
Töötemperatuur - ristmik :
150°C (Max)
Viimased uudised
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BAV21WS-HE3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 250MA SOD323. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM
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