RS07K-GS18 Hinnakujundus (USD) [806219tk Laos]
- 1 pcs$0.04841
- 10,000 pcs$0.04817
- 30,000 pcs$0.04430
- Osa number:
- RS07K-GS18
- Täpsem kirjeldus:
- DIODE GP 800V 500MA DO219AB. Rectifiers 1.3V 2uA 300ns
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - programmeeritav unijunktsioon, Transistorid - IGBT - üksikud, Transistorid - bipolaarsed (BJT) - RF, Transistorid - FET, MOSFET - üksikud, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Dioodid - muutuva mahtuvusega (muutujad, varactors, Transistorid - FET, MOSFET - massiivid and Transistorid - JFET-id ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division RS07K-GS18 electronic components. RS07K-GS18 can be shipped within 24 hours after order. If you have any demands for RS07K-GS18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS07K-GS18 Toote atribuudid
Osa number :
RS07K-GS18
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GP 800V 500MA DO219AB
Sari :
Automotive, AEC-Q101
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
800V
Praegune - keskmine puhastatud (Io) :
500mA
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.3V @ 1A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
300ns
Praegune - vastupidine leke @ Vr :
2µA @ 800V
Mahtuvus @ Vr, F :
4pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-219AB
Tarnija seadme pakett :
DO-219AB (SMF)
Töötemperatuur - ristmik :
-55°C ~ 150°C
Viimased uudised
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RS07K-GS18
Vishay Semiconductor Diodes Division
DIODE GP 800V 500MA DO219AB. Rectifiers 1.3V 2uA 300ns
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