Vishay Semiconductor Diodes Division - BAL99-G3-08

KEY Part #: K6458632

BAL99-G3-08 Hinnakujundus (USD) [3236035tk Laos]

  • 1 pcs$0.01206
  • 15,000 pcs$0.01200

Osa number:
BAL99-G3-08
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 70V 250MA SOT23. Diodes - General Purpose, Power, Switching 70 Volt 250mA 6ns 2A IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - FET, MOSFET - üksikud, Dioodid - Zener - massiivid, Dioodid - sillaldid, Transistorid - FET, MOSFET - massiivid, Türistorid - SCR, Transistorid - JFET-id, Dioodid - RF and Transistorid - programmeeritav unijunktsioon ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division BAL99-G3-08 electronic components. BAL99-G3-08 can be shipped within 24 hours after order. If you have any demands for BAL99-G3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAL99-G3-08 Toote atribuudid

Osa number : BAL99-G3-08
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 70V 250MA SOT23
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 70V
Praegune - keskmine puhastatud (Io) : 250mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 150mA
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 6ns
Praegune - vastupidine leke @ Vr : 2.5µA @ 70V
Mahtuvus @ Vr, F : 1.5pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-236-3, SC-59, SOT-23-3
Tarnija seadme pakett : SOT-23
Töötemperatuur - ristmik : -55°C ~ 150°C

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