Vishay Semiconductor Diodes Division - V8PM12HM3_A/H

KEY Part #: K6452846

V8PM12HM3_A/H Hinnakujundus (USD) [280330tk Laos]

  • 1 pcs$0.13194
  • 6,000 pcs$0.10220

Osa number:
V8PM12HM3_A/H
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE SCHOTTKY 120V 3.6A TO277A.
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - massiivid, Dioodid - Zener - massiivid, Transistorid - bipolaarsed (BJT) - üksikud, Dioodid - RF, Dioodid - alaldid - massiivid, Dioodid - alaldid - ühekordsed, Transistorid - IGBT-moodulid and Transistorid - eriotstarbelised ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division V8PM12HM3_A/H electronic components. V8PM12HM3_A/H can be shipped within 24 hours after order. If you have any demands for V8PM12HM3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V8PM12HM3_A/H Toote atribuudid

Osa number : V8PM12HM3_A/H
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE SCHOTTKY 120V 3.6A TO277A
Sari : Automotive, AEC-Q101, eSMP®, TMBS®
Osa olek : Active
Dioodi tüüp : Schottky
Pinge - tagurpidi alalisvool (Vr) (max) : 120V
Praegune - keskmine puhastatud (Io) : 3.6A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 840mV @ 8A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 300µA @ 120V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-277, 3-PowerDFN
Tarnija seadme pakett : TO-277A (SMPC)
Töötemperatuur - ristmik : -40°C ~ 150°C

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