TRS6E65C,S1AQ Hinnakujundus (USD) [15205tk Laos]
- 1 pcs$2.86009
- 50 pcs$2.84586
- Osa number:
- TRS6E65C,S1AQ
- Täpsem kirjeldus:
- DIODE SCHOTTKY 650V 6A TO220-2L.
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - massiivid, Transistorid - IGBT-moodulid, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - eriotstarbelised, Transistorid - IGBT - üksikud, Dioodid - Zener - üksikud, Elektrijuhi moodulid and Dioodid - sillaldid ...
- Konkurentsieelis:
- We specialize in Toshiba Semiconductor and Storage TRS6E65C,S1AQ electronic components. TRS6E65C,S1AQ can be shipped within 24 hours after order. If you have any demands for TRS6E65C,S1AQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TRS6E65C,S1AQ Toote atribuudid
Osa number :
TRS6E65C,S1AQ
Tootja :
Toshiba Semiconductor and Storage
Kirjeldus :
DIODE SCHOTTKY 650V 6A TO220-2L
Sari :
-
Osa olek :
Not For New Designs
Dioodi tüüp :
Silicon Carbide Schottky
Pinge - tagurpidi alalisvool (Vr) (max) :
650V
Praegune - keskmine puhastatud (Io) :
6A (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.7V @ 6A
Kiirus :
No Recovery Time > 500mA (Io)
Vastupidine taastumisaeg (trr) :
0ns
Praegune - vastupidine leke @ Vr :
90µA @ 650V
Mahtuvus @ Vr, F :
35pF @ 650V, 1MHz
Paigaldus tüüp :
Through Hole
Pakett / kohver :
TO-220-2
Tarnija seadme pakett :
TO-220-2L
Töötemperatuur - ristmik :
175°C (Max)
Viimased uudised
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