Vishay Semiconductor Diodes Division - MMBD914-HE3-18

KEY Part #: K6458611

MMBD914-HE3-18 Hinnakujundus (USD) [3067282tk Laos]

  • 1 pcs$0.01206
  • 10,000 pcs$0.01115

Osa number:
MMBD914-HE3-18
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching 100 Volt 200mA 4ns
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - FET, MOSFET - massiivid, Dioodid - alaldid - ühekordsed, Transistorid - IGBT - üksikud, Transistorid - JFET-id, Türistorid - SCR, Transistorid - FET, MOSFET - RF and Transistorid - bipolaarsed (BJT) - RF ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division MMBD914-HE3-18 electronic components. MMBD914-HE3-18 can be shipped within 24 hours after order. If you have any demands for MMBD914-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMBD914-HE3-18 Toote atribuudid

Osa number : MMBD914-HE3-18
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 100V 200MA SOT23
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 200mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 10mA
Kiirus : Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) : 4ns
Praegune - vastupidine leke @ Vr : 5µA @ 75V
Mahtuvus @ Vr, F : 4pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-236-3, SC-59, SOT-23-3
Tarnija seadme pakett : SOT-23
Töötemperatuur - ristmik : 150°C (Max)

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