Vishay Semiconductor Diodes Division - ESH1D-E3/61T

KEY Part #: K6434154

ESH1D-E3/61T Hinnakujundus (USD) [583123tk Laos]

  • 1 pcs$0.06343
  • 3,600 pcs$0.03872

Osa number:
ESH1D-E3/61T
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 200V 1A DO214AC. Rectifiers 200 Volt 1.0A 25ns Glass Passivated
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - JFET-id, Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - RF, Türistorid - SCR, Türistorid - SCR - moodulid, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - bipolaarsed (BJT) - üksikud and Dioodid - RF ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division ESH1D-E3/61T electronic components. ESH1D-E3/61T can be shipped within 24 hours after order. If you have any demands for ESH1D-E3/61T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH1D-E3/61T Toote atribuudid

Osa number : ESH1D-E3/61T
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 200V 1A DO214AC
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 200V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 900mV @ 1A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 25ns
Praegune - vastupidine leke @ Vr : 1µA @ 200V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AC, SMA
Tarnija seadme pakett : DO-214AC (SMA)
Töötemperatuur - ristmik : -55°C ~ 175°C

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