Vishay Semiconductor Diodes Division - GBU8M-E3/51

KEY Part #: K6540551

GBU8M-E3/51 Hinnakujundus (USD) [49221tk Laos]

  • 1 pcs$0.70241
  • 10 pcs$0.63175
  • 25 pcs$0.59588
  • 100 pcs$0.50762
  • 250 pcs$0.47663
  • 500 pcs$0.41705
  • 1,000 pcs$0.32688
  • 2,500 pcs$0.30434
  • 5,000 pcs$0.29307

Osa number:
GBU8M-E3/51
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
BRIDGE RECT 1PHASE 1KV 3.9A GBU. Bridge Rectifiers 1000 Volt 8.0 Amp Glass Passivated
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Türistorid - SCR, Transistorid - FET, MOSFET - RF, Türistorid - SCR - moodulid, Dioodid - muutuva mahtuvusega (muutujad, varactors, Transistorid - FET, MOSFET - massiivid, Dioodid - alaldid - massiivid and Transistorid - FET, MOSFET - üksikud ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division GBU8M-E3/51 electronic components. GBU8M-E3/51 can be shipped within 24 hours after order. If you have any demands for GBU8M-E3/51, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GBU8M-E3/51 Toote atribuudid

Osa number : GBU8M-E3/51
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : BRIDGE RECT 1PHASE 1KV 3.9A GBU
Sari : -
Osa olek : Active
Dioodi tüüp : Single Phase
Tehnoloogia : Standard
Pinge - tipp-tagumine (max) : 1kV
Praegune - keskmine puhastatud (Io) : 3.9A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 8A
Praegune - vastupidine leke @ Vr : 5µA @ 1000V
Töötemperatuur : -55°C ~ 150°C (TJ)
Paigaldus tüüp : Through Hole
Pakett / kohver : 4-SIP, GBU
Tarnija seadme pakett : GBU

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