Vishay Semiconductor Diodes Division - US1GHE3/61T

KEY Part #: K6444065

[2577tk Laos]


    Osa number:
    US1GHE3/61T
    Tootja:
    Vishay Semiconductor Diodes Division
    Täpsem kirjeldus:
    DIODE GEN PURP 400V 1A DO214AC.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - üksikud, Transistorid - FET, MOSFET - üksikud, Transistorid - IGBT-moodulid, Dioodid - alaldid - massiivid, Transistorid - FET, MOSFET - massiivid, Türistorid - SCR, Transistorid - bipolaarsed (BJT) - RF and Transistorid - bipolaarsed (BJT) - massiivid ...
    Konkurentsieelis:
    We specialize in Vishay Semiconductor Diodes Division US1GHE3/61T electronic components. US1GHE3/61T can be shipped within 24 hours after order. If you have any demands for US1GHE3/61T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    US1GHE3/61T Toote atribuudid

    Osa number : US1GHE3/61T
    Tootja : Vishay Semiconductor Diodes Division
    Kirjeldus : DIODE GEN PURP 400V 1A DO214AC
    Sari : -
    Osa olek : Obsolete
    Dioodi tüüp : Standard
    Pinge - tagurpidi alalisvool (Vr) (max) : 400V
    Praegune - keskmine puhastatud (Io) : 1A
    Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 1A
    Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
    Vastupidine taastumisaeg (trr) : 50ns
    Praegune - vastupidine leke @ Vr : 10µA @ 400V
    Mahtuvus @ Vr, F : 15pF @ 4V, 1MHz
    Paigaldus tüüp : Surface Mount
    Pakett / kohver : DO-214AC, SMA
    Tarnija seadme pakett : DO-214AC (SMA)
    Töötemperatuur - ristmik : -55°C ~ 150°C

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