Vishay Semiconductor Diodes Division - BAV19W-HE3-18

KEY Part #: K6440052

BAV19W-HE3-18 Hinnakujundus (USD) [2489257tk Laos]

  • 1 pcs$0.01568
  • 10,000 pcs$0.01560

Osa number:
BAV19W-HE3-18
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 100V 250MA SOD123. Diodes - General Purpose, Power, Switching 120V 625mA 1A IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - programmeeritav unijunktsioon, Transistorid - IGBT - massiivid, Dioodid - Zener - üksikud, Türistorid - SCR, Transistorid - eriotstarbelised, Dioodid - RF, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel and Dioodid - sillaldid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division BAV19W-HE3-18 electronic components. BAV19W-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAV19W-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV19W-HE3-18 Toote atribuudid

Osa number : BAV19W-HE3-18
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 100V 250MA SOD123
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 250mA (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 200mA
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 50ns
Praegune - vastupidine leke @ Vr : 100nA @ 100V
Mahtuvus @ Vr, F : 1.5pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SOD-123
Tarnija seadme pakett : SOD-123
Töötemperatuur - ristmik : 150°C (Max)

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