1N6484HE3/97 Hinnakujundus (USD) [704650tk Laos]
- 1 pcs$0.05249
- 10,000 pcs$0.04757
- Osa number:
- 1N6484HE3/97
- Täpsem kirjeldus:
- DIODE GEN PURP 1KV 1A DO213AB. Rectifiers 1000 Volt 1.0 Amp 30 Amp IFSM
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - SCR, Transistorid - FET, MOSFET - üksikud, Transistorid - FET, MOSFET - massiivid, Transistorid - FET, MOSFET - RF, Dioodid - RF, Dioodid - alaldid - massiivid, Transistorid - JFET-id and Transistorid - bipolaarsed (BJT) - ühepoolsed, eel ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division 1N6484HE3/97 electronic components. 1N6484HE3/97 can be shipped within 24 hours after order. If you have any demands for 1N6484HE3/97, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N6484HE3/97 Toote atribuudid
Osa number :
1N6484HE3/97
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 1KV 1A DO213AB
Sari :
SUPERECTIFIER®
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
1000V
Praegune - keskmine puhastatud (Io) :
1A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.1V @ 1A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
-
Praegune - vastupidine leke @ Vr :
10µA @ 1000V
Mahtuvus @ Vr, F :
8pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-213AB, MELF (Glass)
Tarnija seadme pakett :
DO-213AB
Töötemperatuur - ristmik :
-65°C ~ 175°C
Viimased uudised
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