ES3DHE3J_A/I Hinnakujundus (USD) [371115tk Laos]
- 1 pcs$0.10142
- 7,000 pcs$0.10091
- Osa number:
- ES3DHE3J_A/I
- Täpsem kirjeldus:
- DIODE GEN PURP 200V 3A DO214AB. Rectifiers 3A, 200V, 20NS, UF RECT, SMD
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - IGBT - massiivid, Transistorid - FET, MOSFET - RF, Türistorid - SCR - moodulid, Dioodid - sillaldid, Transistorid - IGBT-moodulid, Türistorid - SCR and Transistorid - bipolaarsed (BJT) - RF ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division ES3DHE3J_A/I electronic components. ES3DHE3J_A/I can be shipped within 24 hours after order. If you have any demands for ES3DHE3J_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES3DHE3J_A/I Toote atribuudid
Osa number :
ES3DHE3J_A/I
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 200V 3A DO214AB
Sari :
Automotive, AEC-Q101
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
200V
Praegune - keskmine puhastatud (Io) :
3A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
900mV @ 3A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
30ns
Praegune - vastupidine leke @ Vr :
10µA @ 200V
Mahtuvus @ Vr, F :
45pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-214AB, SMC
Tarnija seadme pakett :
DO-214AB (SMC)
Töötemperatuur - ristmik :
-55°C ~ 150°C
Viimased uudised
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