Vishay Semiconductor Diodes Division - S4PGHM3_A/H

KEY Part #: K6448944

S4PGHM3_A/H Hinnakujundus (USD) [403805tk Laos]

  • 1 pcs$0.09160
  • 3,000 pcs$0.07724

Osa number:
S4PGHM3_A/H
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 400V 4A TO277A. Rectifiers 4A, 400V, SMPC STD, SM Rect
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - massiivid, Transistorid - IGBT - üksikud, Türistorid - DIAC-d, SIDAC-id, Transistorid - FET, MOSFET - üksikud, Dioodid - Zener - üksikud, Transistorid - JFET-id, Transistorid - bipolaarsed (BJT) - massiivid and Elektrijuhi moodulid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division S4PGHM3_A/H electronic components. S4PGHM3_A/H can be shipped within 24 hours after order. If you have any demands for S4PGHM3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S4PGHM3_A/H Toote atribuudid

Osa number : S4PGHM3_A/H
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 400V 4A TO277A
Sari : Automotive, AEC-Q101, eSMP®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 400V
Praegune - keskmine puhastatud (Io) : 4A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 4A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 2.5µs
Praegune - vastupidine leke @ Vr : 10µA @ 400V
Mahtuvus @ Vr, F : 30pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-277, 3-PowerDFN
Tarnija seadme pakett : TO-277A (SMPC)
Töötemperatuur - ristmik : -55°C ~ 150°C

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