Microsemi Corporation - JAN1N5806

KEY Part #: K6440051

JAN1N5806 Hinnakujundus (USD) [7100tk Laos]

  • 1 pcs$5.09009
  • 10 pcs$4.58108
  • 25 pcs$4.17396
  • 100 pcs$3.76666
  • 250 pcs$3.46126
  • 500 pcs$3.15585

Osa number:
JAN1N5806
Tootja:
Microsemi Corporation
Täpsem kirjeldus:
DIODE GEN PURP 150V 2.5A AXIAL. ESD Suppressors / TVS Diodes D MET 6A SFST 50V
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Türistorid - DIAC-d, SIDAC-id, Türistorid - SCR, Dioodid - Zener - üksikud, Transistorid - JFET-id, Dioodid - alaldid - massiivid, Dioodid - RF and Dioodid - alaldid - ühekordsed ...
Konkurentsieelis:
We specialize in Microsemi Corporation JAN1N5806 electronic components. JAN1N5806 can be shipped within 24 hours after order. If you have any demands for JAN1N5806, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5806 Toote atribuudid

Osa number : JAN1N5806
Tootja : Microsemi Corporation
Kirjeldus : DIODE GEN PURP 150V 2.5A AXIAL
Sari : Military, MIL-PRF-19500/477
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 150V
Praegune - keskmine puhastatud (Io) : 2.5A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 975mV @ 2.5A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 25ns
Praegune - vastupidine leke @ Vr : 1µA @ 150V
Mahtuvus @ Vr, F : 25pF @ 10V, 1MHz
Paigaldus tüüp : Through Hole
Pakett / kohver : A, Axial
Tarnija seadme pakett : -
Töötemperatuur - ristmik : -65°C ~ 175°C

Samuti võite olla huvitatud
  • BAS29

    ON Semiconductor

    DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA

  • 1N4448W-G3-08

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns

  • BAV21W-E3-08

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 250MA SOD123. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM

  • BAV21W-E3-18

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 250MA SOD123. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM

  • BAT46W-E3-18

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 100V 150MA SOD123. Schottky Diodes & Rectifiers 100Volt 150mA 750mA

  • 1N4448W-E3-18

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns