Vishay Semiconductor Diodes Division - B80C800G-E4/51

KEY Part #: K6539895

B80C800G-E4/51 Hinnakujundus (USD) [158510tk Laos]

  • 1 pcs$0.23334
  • 3,000 pcs$0.06743

Osa number:
B80C800G-E4/51
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
BRIDGE RECT 1P 125V 900MA WOG. Bridge Rectifiers 0.9 Amp 125 Volt
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - TRIAC-d, Türistorid - DIAC-d, SIDAC-id, Transistorid - FET, MOSFET - RF, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - IGBT - üksikud, Transistorid - programmeeritav unijunktsioon, Transistorid - eriotstarbelised and Türistorid - SCR - moodulid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division B80C800G-E4/51 electronic components. B80C800G-E4/51 can be shipped within 24 hours after order. If you have any demands for B80C800G-E4/51, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

B80C800G-E4/51 Toote atribuudid

Osa number : B80C800G-E4/51
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : BRIDGE RECT 1P 125V 900MA WOG
Sari : -
Osa olek : Active
Dioodi tüüp : Single Phase
Tehnoloogia : Standard
Pinge - tipp-tagumine (max) : 125V
Praegune - keskmine puhastatud (Io) : 900mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 900mA
Praegune - vastupidine leke @ Vr : 10µA @ 125V
Töötemperatuur : -40°C ~ 125°C (TJ)
Paigaldus tüüp : Through Hole
Pakett / kohver : 4-Circular, WOG
Tarnija seadme pakett : WOG

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