ESH2B-M3/5BT Hinnakujundus (USD) [730521tk Laos]
- 1 pcs$0.05063
- 12,800 pcs$0.04588
- Osa number:
- ESH2B-M3/5BT
- Täpsem kirjeldus:
- DIODE GEN PURP 100V 2A DO214AA. Rectifiers 2A,100V,25ns,UF Rect, SMD
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - programmeeritav unijunktsioon, Türistorid - TRIAC-d, Transistorid - FET, MOSFET - üksikud, Dioodid - RF, Transistorid - FET, MOSFET - RF, Transistorid - bipolaarsed (BJT) - RF, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel and Dioodid - Zener - massiivid ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division ESH2B-M3/5BT electronic components. ESH2B-M3/5BT can be shipped within 24 hours after order. If you have any demands for ESH2B-M3/5BT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ESH2B-M3/5BT Toote atribuudid
Osa number :
ESH2B-M3/5BT
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 100V 2A DO214AA
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
100V
Praegune - keskmine puhastatud (Io) :
2A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
930mV @ 2A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
35ns
Praegune - vastupidine leke @ Vr :
2µA @ 100V
Mahtuvus @ Vr, F :
30pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-214AA, SMB
Tarnija seadme pakett :
DO-214AA (SMB)
Töötemperatuur - ristmik :
-55°C ~ 175°C
Viimased uudised
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