Toshiba Semiconductor and Storage - 1SS387CT,L3F

KEY Part #: K6428275

1SS387CT,L3F Hinnakujundus (USD) [3056256tk Laos]

  • 1 pcs$0.01277
  • 10,000 pcs$0.01271
  • 30,000 pcs$0.01196
  • 50,000 pcs$0.01121
  • 100,000 pcs$0.00997

Osa number:
1SS387CT,L3F
Tootja:
Toshiba Semiconductor and Storage
Täpsem kirjeldus:
DIODE GEN PURP 80V 100MA CST2. Diodes - General Purpose, Power, Switching Switching Diode 80V 100MA CST2
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - eriotstarbelised, Transistorid - IGBT-moodulid, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - FET, MOSFET - massiivid, Transistorid - bipolaarsed (BJT) - üksikud, Dioodid - RF, Dioodid - muutuva mahtuvusega (muutujad, varactors and Türistorid - SCR - moodulid ...
Konkurentsieelis:
We specialize in Toshiba Semiconductor and Storage 1SS387CT,L3F electronic components. 1SS387CT,L3F can be shipped within 24 hours after order. If you have any demands for 1SS387CT,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS387CT,L3F Toote atribuudid

Osa number : 1SS387CT,L3F
Tootja : Toshiba Semiconductor and Storage
Kirjeldus : DIODE GEN PURP 80V 100MA CST2
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 80V
Praegune - keskmine puhastatud (Io) : 100mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.2V @ 100mA
Kiirus : Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) : 1.6ns
Praegune - vastupidine leke @ Vr : 500nA @ 80V
Mahtuvus @ Vr, F : 0.5pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SOD-882
Tarnija seadme pakett : CST2
Töötemperatuur - ristmik : 150°C (Max)

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