IDC51D120T6MX1SA3 Hinnakujundus (USD) [12304tk Laos]
- 1 pcs$3.34932
- Osa number:
- IDC51D120T6MX1SA3
- Tootja:
- Infineon Technologies
- Täpsem kirjeldus:
- DIODE GEN PURP 1.2KV 100A WAFER.
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - FET, MOSFET - üksikud, Transistorid - JFET-id, Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - RF, Transistorid - FET, MOSFET - massiivid, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - bipolaarsed (BJT) - eelkallutatud m and Türistorid - DIAC-d, SIDAC-id ...
- Konkurentsieelis:
- We specialize in Infineon Technologies IDC51D120T6MX1SA3 electronic components. IDC51D120T6MX1SA3 can be shipped within 24 hours after order. If you have any demands for IDC51D120T6MX1SA3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDC51D120T6MX1SA3 Toote atribuudid
Osa number :
IDC51D120T6MX1SA3
Tootja :
Infineon Technologies
Kirjeldus :
DIODE GEN PURP 1.2KV 100A WAFER
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
1200V
Praegune - keskmine puhastatud (Io) :
100A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
2.05V @ 100A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
-
Praegune - vastupidine leke @ Vr :
18µA @ 1200V
Mahtuvus @ Vr, F :
-
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
Die
Tarnija seadme pakett :
Sawn on foil
Töötemperatuur - ristmik :
-40°C ~ 175°C
Viimased uudised
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