Vishay Semiconductor Diodes Division - GL34J-E3/83

KEY Part #: K6458005

GL34J-E3/83 Hinnakujundus (USD) [793899tk Laos]

  • 1 pcs$0.04916
  • 9,000 pcs$0.04892
  • 18,000 pcs$0.04576
  • 27,000 pcs$0.04208

Osa number:
GL34J-E3/83
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 600V 500MA DO213. Rectifiers 600 Volt 0.5 Amp 10 Amp IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - programmeeritav unijunktsioon, Türistorid - SCR, Dioodid - RF, Transistorid - IGBT - massiivid, Dioodid - Zener - massiivid, Transistorid - JFET-id and Transistorid - eriotstarbelised ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division GL34J-E3/83 electronic components. GL34J-E3/83 can be shipped within 24 hours after order. If you have any demands for GL34J-E3/83, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GL34J-E3/83 Toote atribuudid

Osa number : GL34J-E3/83
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 600V 500MA DO213
Sari : SUPERECTIFIER®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 600V
Praegune - keskmine puhastatud (Io) : 500mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.3V @ 500mA
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 1.5µs
Praegune - vastupidine leke @ Vr : 5µA @ 600V
Mahtuvus @ Vr, F : 4pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-213AA (Glass)
Tarnija seadme pakett : DO-213AA (GL34)
Töötemperatuur - ristmik : -65°C ~ 175°C

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