Vishay Semiconductor Diodes Division - ESH1BHE3_A/H

KEY Part #: K6433274

ESH1BHE3_A/H Hinnakujundus (USD) [635119tk Laos]

  • 1 pcs$0.05824

Osa number:
ESH1BHE3_A/H
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1A, 100V, 25NS, SMA AEC-Q101 Qualified
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - SCR, Dioodid - muutuva mahtuvusega (muutujad, varactors, Transistorid - IGBT - üksikud, Transistorid - bipolaarsed (BJT) - üksikud, Dioodid - alaldid - massiivid, Transistorid - eriotstarbelised, Transistorid - bipolaarsed (BJT) - RF and Transistorid - IGBT-moodulid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division ESH1BHE3_A/H electronic components. ESH1BHE3_A/H can be shipped within 24 hours after order. If you have any demands for ESH1BHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH1BHE3_A/H Toote atribuudid

Osa number : ESH1BHE3_A/H
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 100V 1A DO214AC
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 900mV @ 1A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 25ns
Praegune - vastupidine leke @ Vr : 1µA @ 100V
Mahtuvus @ Vr, F : 25pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AC, SMA
Tarnija seadme pakett : DO-214AC (SMA)
Töötemperatuur - ristmik : -55°C ~ 175°C

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