SE70PJHM3_A/I Hinnakujundus (USD) [229500tk Laos]
- 1 pcs$0.16117
- 6,500 pcs$0.13842
- Osa number:
- SE70PJHM3_A/I
- Täpsem kirjeldus:
- DIODE GEN PURP 600V 2.9A TO277A. Rectifiers 7A, 600V, SMPC, ESD PROTECTION
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - massiivid, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - IGBT-moodulid, Transistorid - FET, MOSFET - üksikud, Transistorid - bipolaarsed (BJT) - RF, Elektrijuhi moodulid and Transistorid - JFET-id ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division SE70PJHM3_A/I electronic components. SE70PJHM3_A/I can be shipped within 24 hours after order. If you have any demands for SE70PJHM3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SE70PJHM3_A/I Toote atribuudid
Osa number :
SE70PJHM3_A/I
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 600V 2.9A TO277A
Sari :
Automotive, AEC-Q101, eSMP®
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
600V
Praegune - keskmine puhastatud (Io) :
2.9A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.05V @ 7A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
2.6µs
Praegune - vastupidine leke @ Vr :
20µA @ 600V
Mahtuvus @ Vr, F :
76pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
TO-277, 3-PowerDFN
Tarnija seadme pakett :
TO-277A (SMPC)
Töötemperatuur - ristmik :
-55°C ~ 175°C
Viimased uudised
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