Vishay Semiconductor Diodes Division - NSB8GTHE3_A/P

KEY Part #: K6439195

NSB8GTHE3_A/P Hinnakujundus (USD) [128710tk Laos]

  • 1 pcs$0.28737
  • 1,000 pcs$0.26162

Osa number:
NSB8GTHE3_A/P
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 400V 8A TO263AB. Rectifiers 8A 400V Glass Psvtd AEC-Q101 Qualified
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - SCR - moodulid, Transistorid - IGBT - üksikud, Dioodid - alaldid - ühekordsed, Elektrijuhi moodulid, Dioodid - alaldid - massiivid, Transistorid - IGBT - massiivid, Transistorid - programmeeritav unijunktsioon and Transistorid - bipolaarsed (BJT) - ühepoolsed, eel ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division NSB8GTHE3_A/P electronic components. NSB8GTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NSB8GTHE3_A/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSB8GTHE3_A/P Toote atribuudid

Osa number : NSB8GTHE3_A/P
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 400V 8A TO263AB
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 400V
Praegune - keskmine puhastatud (Io) : 8A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 8A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 10µA @ 400V
Mahtuvus @ Vr, F : 55pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett : TO-263AB
Töötemperatuur - ristmik : -55°C ~ 150°C

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