Toshiba Semiconductor and Storage - 1SS387,L3F

KEY Part #: K6456629

1SS387,L3F Hinnakujundus (USD) [2750629tk Laos]

  • 1 pcs$0.01419
  • 8,000 pcs$0.01412
  • 16,000 pcs$0.01200
  • 24,000 pcs$0.01130
  • 56,000 pcs$0.01059
  • 200,000 pcs$0.00941

Osa number:
1SS387,L3F
Tootja:
Toshiba Semiconductor and Storage
Täpsem kirjeldus:
DIODE GEN PURP 80V 100MA ESC. Diodes - General Purpose, Power, Switching Switching Diode
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - eelkallutatud m, Türistorid - DIAC-d, SIDAC-id, Transistorid - FET, MOSFET - üksikud, Transistorid - bipolaarsed (BJT) - massiivid, Türistorid - SCR - moodulid, Dioodid - alaldid - massiivid, Transistorid - bipolaarsed (BJT) - RF and Transistorid - JFET-id ...
Konkurentsieelis:
We specialize in Toshiba Semiconductor and Storage 1SS387,L3F electronic components. 1SS387,L3F can be shipped within 24 hours after order. If you have any demands for 1SS387,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS387,L3F Toote atribuudid

Osa number : 1SS387,L3F
Tootja : Toshiba Semiconductor and Storage
Kirjeldus : DIODE GEN PURP 80V 100MA ESC
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 80V
Praegune - keskmine puhastatud (Io) : 100mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.2V @ 100mA
Kiirus : Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) : 4ns
Praegune - vastupidine leke @ Vr : 500nA @ 80V
Mahtuvus @ Vr, F : 3pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SC-79, SOD-523
Tarnija seadme pakett : ESC
Töötemperatuur - ristmik : 125°C (Max)

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