Vishay Semiconductor Diodes Division - IMBD4448-G3-08

KEY Part #: K6458548

IMBD4448-G3-08 Hinnakujundus (USD) [2227230tk Laos]

  • 1 pcs$0.01752
  • 15,000 pcs$0.01744

Osa number:
IMBD4448-G3-08
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 75V 150MA SOT23. Diodes - General Purpose, Power, Switching 100V 150mA 4ns 500mA IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - üksikud, Transistorid - FET, MOSFET - üksikud, Transistorid - IGBT-moodulid, Türistorid - DIAC-d, SIDAC-id, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Türistorid - SCR, Transistorid - eriotstarbelised and Türistorid - TRIAC-d ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division IMBD4448-G3-08 electronic components. IMBD4448-G3-08 can be shipped within 24 hours after order. If you have any demands for IMBD4448-G3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IMBD4448-G3-08 Toote atribuudid

Osa number : IMBD4448-G3-08
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 75V 150MA SOT23
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 75V
Praegune - keskmine puhastatud (Io) : 150mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 10mA
Kiirus : Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) : 4ns
Praegune - vastupidine leke @ Vr : 2.5µA @ 70V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-236-3, SC-59, SOT-23-3
Tarnija seadme pakett : SOT-23
Töötemperatuur - ristmik : 150°C (Max)

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