Toshiba Semiconductor and Storage - 1SS352,H3F

KEY Part #: K6458215

1SS352,H3F Hinnakujundus (USD) [3056256tk Laos]

  • 1 pcs$0.01277
  • 3,000 pcs$0.01271
  • 6,000 pcs$0.01146
  • 15,000 pcs$0.00997
  • 30,000 pcs$0.00897
  • 75,000 pcs$0.00797
  • 150,000 pcs$0.00664

Osa number:
1SS352,H3F
Tootja:
Toshiba Semiconductor and Storage
Täpsem kirjeldus:
DIODE GEN PURP 80V 100MA SC76-2. Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - Zener - üksikud, Dioodid - sillaldid, Dioodid - muutuva mahtuvusega (muutujad, varactors, Transistorid - FET, MOSFET - RF, Transistorid - FET, MOSFET - massiivid, Transistorid - eriotstarbelised, Dioodid - Zener - massiivid and Transistorid - IGBT - massiivid ...
Konkurentsieelis:
We specialize in Toshiba Semiconductor and Storage 1SS352,H3F electronic components. 1SS352,H3F can be shipped within 24 hours after order. If you have any demands for 1SS352,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS352,H3F Toote atribuudid

Osa number : 1SS352,H3F
Tootja : Toshiba Semiconductor and Storage
Kirjeldus : DIODE GEN PURP 80V 100MA SC76-2
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 80V
Praegune - keskmine puhastatud (Io) : 100mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.2V @ 100mA
Kiirus : Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) : 4ns
Praegune - vastupidine leke @ Vr : 500nA @ 80V
Mahtuvus @ Vr, F : 3pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SC-76A
Tarnija seadme pakett : SC-76-2
Töötemperatuur - ristmik : 125°C (Max)

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