Vishay Semiconductor Diodes Division - VS-8EWS08S-M3

KEY Part #: K6443782

VS-8EWS08S-M3 Hinnakujundus (USD) [33046tk Laos]

  • 1 pcs$1.31329
  • 10 pcs$1.17843
  • 25 pcs$1.05462
  • 100 pcs$0.89854
  • 250 pcs$0.84368
  • 500 pcs$0.73822
  • 1,000 pcs$0.61167
  • 2,500 pcs$0.56949

Osa number:
VS-8EWS08S-M3
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 800V 8A TO252AA. Rectifiers New Input Diodes - D-PAK-e3
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - eriotstarbelised, Dioodid - RF, Transistorid - IGBT-moodulid, Türistorid - SCR, Türistorid - TRIAC-d, Transistorid - FET, MOSFET - massiivid, Transistorid - bipolaarsed (BJT) - RF and Transistorid - bipolaarsed (BJT) - üksikud ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division VS-8EWS08S-M3 electronic components. VS-8EWS08S-M3 can be shipped within 24 hours after order. If you have any demands for VS-8EWS08S-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-8EWS08S-M3 Toote atribuudid

Osa number : VS-8EWS08S-M3
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 800V 8A TO252AA
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 800V
Praegune - keskmine puhastatud (Io) : 8A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 8A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 50µA @ 800V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63
Tarnija seadme pakett : D-PAK (TO-252AA)
Töötemperatuur - ristmik : -55°C ~ 150°C

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