Vishay Semiconductor Diodes Division - EGF1D-2HE3/67A

KEY Part #: K6439856

[7500tk Laos]


    Osa number:
    EGF1D-2HE3/67A
    Tootja:
    Vishay Semiconductor Diodes Division
    Täpsem kirjeldus:
    DIODE GEN PURP 200V 1A DO214BA.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - RF, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Türistorid - SCR, Transistorid - bipolaarsed (BJT) - RF, Türistorid - TRIAC-d, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Dioodid - alaldid - massiivid and Transistorid - bipolaarsed (BJT) - massiivid ...
    Konkurentsieelis:
    We specialize in Vishay Semiconductor Diodes Division EGF1D-2HE3/67A electronic components. EGF1D-2HE3/67A can be shipped within 24 hours after order. If you have any demands for EGF1D-2HE3/67A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    EGF1D-2HE3/67A Toote atribuudid

    Osa number : EGF1D-2HE3/67A
    Tootja : Vishay Semiconductor Diodes Division
    Kirjeldus : DIODE GEN PURP 200V 1A DO214BA
    Sari : Automotive, AEC-Q101, Superectifier®
    Osa olek : Discontinued at Digi-Key
    Dioodi tüüp : Standard
    Pinge - tagurpidi alalisvool (Vr) (max) : 200V
    Praegune - keskmine puhastatud (Io) : 1A
    Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 1A
    Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
    Vastupidine taastumisaeg (trr) : 50ns
    Praegune - vastupidine leke @ Vr : 5µA @ 200V
    Mahtuvus @ Vr, F : 15pF @ 4V, 1MHz
    Paigaldus tüüp : Surface Mount
    Pakett / kohver : DO-214BA
    Tarnija seadme pakett : DO-214BA (GF1)
    Töötemperatuur - ristmik : -65°C ~ 175°C

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