Vishay Semiconductor Diodes Division - UGB8AT-E3/81

KEY Part #: K6456442

UGB8AT-E3/81 Hinnakujundus (USD) [116523tk Laos]

  • 1 pcs$0.31742
  • 800 pcs$0.29730

Osa number:
UGB8AT-E3/81
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 50V 8A TO263AB. Rectifiers 50 Volt 8.0A 20ns 150 Amp IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT-moodulid, Dioodid - Zener - üksikud, Transistorid - FET, MOSFET - RF, Elektrijuhi moodulid, Dioodid - sillaldid, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - IGBT - massiivid and Transistorid - bipolaarsed (BJT) - massiivid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division UGB8AT-E3/81 electronic components. UGB8AT-E3/81 can be shipped within 24 hours after order. If you have any demands for UGB8AT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UGB8AT-E3/81 Toote atribuudid

Osa number : UGB8AT-E3/81
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 50V 8A TO263AB
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 50V
Praegune - keskmine puhastatud (Io) : 8A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 8A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 30ns
Praegune - vastupidine leke @ Vr : 10µA @ 50V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett : TO-263AB
Töötemperatuur - ristmik : -55°C ~ 150°C

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