Vishay Semiconductor Diodes Division - 1N4150W-E3-08

KEY Part #: K6455777

1N4150W-E3-08 Hinnakujundus (USD) [1945524tk Laos]

  • 1 pcs$0.10678
  • 10 pcs$0.08741
  • 25 pcs$0.07309
  • 100 pcs$0.04631
  • 250 pcs$0.03575
  • 500 pcs$0.03048
  • 1,000 pcs$0.02072

Osa number:
1N4150W-E3-08
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - massiivid, Dioodid - alaldid - massiivid, Türistorid - SCR, Transistorid - bipolaarsed (BJT) - RF, Transistorid - JFET-id, Transistorid - FET, MOSFET - RF, Transistorid - IGBT-moodulid and Elektrijuhi moodulid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division 1N4150W-E3-08 electronic components. 1N4150W-E3-08 can be shipped within 24 hours after order. If you have any demands for 1N4150W-E3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4150W-E3-08 Toote atribuudid

Osa number : 1N4150W-E3-08
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 50V 200MA SOD123
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 50V
Praegune - keskmine puhastatud (Io) : 200mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 200mA
Kiirus : Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) : 4ns
Praegune - vastupidine leke @ Vr : 100nA @ 50V
Mahtuvus @ Vr, F : 2.5pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SOD-123
Tarnija seadme pakett : SOD-123
Töötemperatuur - ristmik : 150°C (Max)

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