1N5400GHB0G Hinnakujundus (USD) [1257008tk Laos]
- 1 pcs$0.02943
- Osa number:
- 1N5400GHB0G
- Tootja:
- Taiwan Semiconductor Corporation
- Täpsem kirjeldus:
- DIODE GEN PURP 50V 3A DO201AD.
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - RF, Transistorid - bipolaarsed (BJT) - RF, Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - massiivid, Türistorid - DIAC-d, SIDAC-id, Elektrijuhi moodulid, Transistorid - programmeeritav unijunktsioon and Transistorid - IGBT-moodulid ...
- Konkurentsieelis:
- We specialize in Taiwan Semiconductor Corporation 1N5400GHB0G electronic components. 1N5400GHB0G can be shipped within 24 hours after order. If you have any demands for 1N5400GHB0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N5400GHB0G Toote atribuudid
Osa number :
1N5400GHB0G
Tootja :
Taiwan Semiconductor Corporation
Kirjeldus :
DIODE GEN PURP 50V 3A DO201AD
Sari :
Automotive, AEC-Q101
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
50V
Praegune - keskmine puhastatud (Io) :
3A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.1V @ 3A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
-
Praegune - vastupidine leke @ Vr :
5µA @ 50V
Mahtuvus @ Vr, F :
25pF @ 4V, 1MHz
Paigaldus tüüp :
Through Hole
Pakett / kohver :
DO-201AD, Axial
Tarnija seadme pakett :
DO-201AD
Töötemperatuur - ristmik :
-55°C ~ 150°C
Viimased uudised
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