Vishay Semiconductor Diodes Division - ES1B-M3/61T

KEY Part #: K6434033

ES1B-M3/61T Hinnakujundus (USD) [912581tk Laos]

  • 1 pcs$0.04053
  • 16,200 pcs$0.03673

Osa number:
ES1B-M3/61T
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1A,100V,15NS,UF Rect, SMD
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Elektrijuhi moodulid, Transistorid - FET, MOSFET - RF, Transistorid - bipolaarsed (BJT) - massiivid, Dioodid - Zener - üksikud, Transistorid - eriotstarbelised, Türistorid - SCR - moodulid, Transistorid - programmeeritav unijunktsioon and Türistorid - SCR ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division ES1B-M3/61T electronic components. ES1B-M3/61T can be shipped within 24 hours after order. If you have any demands for ES1B-M3/61T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES1B-M3/61T Toote atribuudid

Osa number : ES1B-M3/61T
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 100V 1A DO214AC
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 920mV @ 1A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 25ns
Praegune - vastupidine leke @ Vr : 5µA @ 100V
Mahtuvus @ Vr, F : 10pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AC, SMA
Tarnija seadme pakett : DO-214AC (SMA)
Töötemperatuur - ristmik : -55°C ~ 150°C

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