Toshiba Semiconductor and Storage - BAS516,L3F

KEY Part #: K6458642

BAS516,L3F Hinnakujundus (USD) [3388457tk Laos]

  • 1 pcs$0.01092

Osa number:
BAS516,L3F
Tootja:
Toshiba Semiconductor and Storage
Täpsem kirjeldus:
DIODE GEN PURP 100V 250MA ESC. Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - programmeeritav unijunktsioon, Transistorid - bipolaarsed (BJT) - üksikud, Dioodid - sillaldid, Türistorid - SCR - moodulid, Dioodid - muutuva mahtuvusega (muutujad, varactors, Transistorid - FET, MOSFET - RF, Transistorid - FET, MOSFET - üksikud and Türistorid - TRIAC-d ...
Konkurentsieelis:
We specialize in Toshiba Semiconductor and Storage BAS516,L3F electronic components. BAS516,L3F can be shipped within 24 hours after order. If you have any demands for BAS516,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS516,L3F Toote atribuudid

Osa number : BAS516,L3F
Tootja : Toshiba Semiconductor and Storage
Kirjeldus : DIODE GEN PURP 100V 250MA ESC
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 250mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 150mA
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 3ns
Praegune - vastupidine leke @ Vr : 200nA @ 80V
Mahtuvus @ Vr, F : 0.35pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SC-79, SOD-523
Tarnija seadme pakett : ESC
Töötemperatuur - ristmik : 150°C (Max)

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