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Kui teie asukohta pole loendis, valige üks järgmistest:

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  1. Kodu
  2. Tooted
  3. DRAM
  4. UFS
  5. KLUCG2K1EA-B0C1

Samsung Semiconductor - KLUCG2K1EA-B0C1

KEY Part #: K7360014

[23209tk Laos]

    Osa number:
    KLUCG2K1EA-B0C1
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    UFS 2.1 64 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: LPDDR4, HBM Flarebolt, LPDDR5, HBM Aquabolt, MODULE, LPDDR3, LPDDR4X and DDR4 ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor KLUCG2K1EA-B0C1 electronic components. KLUCG2K1EA-B0C1 can be shipped within 24 hours after order. If you have any demands for KLUCG2K1EA-B0C1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    KLUCG2K1EA-B0C1 Toote atribuudid

    Osa number : KLUCG2K1EA-B0C1
    Tootja : Samsung Semiconductor
    Kirjeldus : UFS 2.1 64 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production
    Sari : DDR3
    versioon : UFS 2.1
    tihedus : 64 GB
    Pinge : 1.8 / 3.3 V
    Interface : G3 2Lane
    paketi suurus : 11.5 x 13 x 1.0 mm
    Temp. : -25 ~ 85 °C
    toote staatus : Mass Production

    Viimased uudised

    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Samsung Z-SSD SZ985
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    The future of NAND technology
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
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