Vishay Semiconductor Diodes Division - UH3DHE3_A/H

KEY Part #: K6434597

UH3DHE3_A/H Hinnakujundus (USD) [347921tk Laos]

  • 1 pcs$0.10631
  • 3,400 pcs$0.09634

Osa number:
UH3DHE3_A/H
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 200V 3A DO214AB. Rectifiers 3A, 200V, 25NS, PLANNAR FER RECT SMD
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - FET, MOSFET - RF, Transistorid - FET, MOSFET - üksikud, Dioodid - Zener - massiivid, Transistorid - IGBT-moodulid, Transistorid - IGBT - massiivid, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - eriotstarbelised and Transistorid - bipolaarsed (BJT) - üksikud ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division UH3DHE3_A/H electronic components. UH3DHE3_A/H can be shipped within 24 hours after order. If you have any demands for UH3DHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH3DHE3_A/H Toote atribuudid

Osa number : UH3DHE3_A/H
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 200V 3A DO214AB
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 200V
Praegune - keskmine puhastatud (Io) : 3A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.05V @ 3A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 40ns
Praegune - vastupidine leke @ Vr : 5µA @ 200V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AB, SMC
Tarnija seadme pakett : DO-214AB (SMC)
Töötemperatuur - ristmik : -55°C ~ 175°C

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