Vishay Semiconductor Diodes Division - BAQ133-GS08

KEY Part #: K6454599

BAQ133-GS08 Hinnakujundus (USD) [1680226tk Laos]

  • 1 pcs$0.02201
  • 12,500 pcs$0.01553

Osa number:
BAQ133-GS08
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 30V 200MA SOD80. Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - Zener - massiivid, Türistorid - DIAC-d, SIDAC-id, Dioodid - RF, Türistorid - SCR - moodulid, Transistorid - IGBT - üksikud, Elektrijuhi moodulid, Transistorid - JFET-id and Dioodid - sillaldid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division BAQ133-GS08 electronic components. BAQ133-GS08 can be shipped within 24 hours after order. If you have any demands for BAQ133-GS08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAQ133-GS08 Toote atribuudid

Osa number : BAQ133-GS08
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 30V 200MA SOD80
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 30V
Praegune - keskmine puhastatud (Io) : 200mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 100mA
Kiirus : Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 1nA @ 15V
Mahtuvus @ Vr, F : 3pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SOD-80 Variant
Tarnija seadme pakett : SOD-80 QuadroMELF
Töötemperatuur - ristmik : -65°C ~ 175°C

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