VS-4ESH02-M3/86A Hinnakujundus (USD) [370175tk Laos]
- 1 pcs$0.09992
- 1,500 pcs$0.09241
- 3,000 pcs$0.08426
- 7,500 pcs$0.07882
- 10,500 pcs$0.07339
- Osa number:
- VS-4ESH02-M3/86A
- Täpsem kirjeldus:
- DIODE GEN PURP 200V 4A TO277A. Rectifiers Hypfst Rct 4A 200V
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - massiivid, Transistorid - bipolaarsed (BJT) - RF, Dioodid - Zener - massiivid, Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - RF, Dioodid - sillaldid, Transistorid - IGBT - üksikud and Dioodid - RF ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division VS-4ESH02-M3/86A electronic components. VS-4ESH02-M3/86A can be shipped within 24 hours after order. If you have any demands for VS-4ESH02-M3/86A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-4ESH02-M3/86A Toote atribuudid
Osa number :
VS-4ESH02-M3/86A
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 200V 4A TO277A
Sari :
FRED Pt®
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
200V
Praegune - keskmine puhastatud (Io) :
4A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
930mV @ 4A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
20ns
Praegune - vastupidine leke @ Vr :
2µA @ 200V
Mahtuvus @ Vr, F :
-
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
TO-277, 3-PowerDFN
Tarnija seadme pakett :
TO-277A (SMPC)
Töötemperatuur - ristmik :
-65°C ~ 175°C
Viimased uudised
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