Vishay Semiconductor Diodes Division - FESB16CT-E3/81

KEY Part #: K6456211

FESB16CT-E3/81 Hinnakujundus (USD) [84873tk Laos]

  • 1 pcs$0.46070
  • 800 pcs$0.42754

Osa number:
FESB16CT-E3/81
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 150V 16A TO263AB. Rectifiers 150 Volt 16 Amp 35ns Single
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - SCR, Dioodid - RF, Dioodid - sillaldid, Transistorid - eriotstarbelised, Dioodid - Zener - massiivid, Transistorid - JFET-id, Transistorid - programmeeritav unijunktsioon and Transistorid - bipolaarsed (BJT) - massiivid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division FESB16CT-E3/81 electronic components. FESB16CT-E3/81 can be shipped within 24 hours after order. If you have any demands for FESB16CT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB16CT-E3/81 Toote atribuudid

Osa number : FESB16CT-E3/81
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 150V 16A TO263AB
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 150V
Praegune - keskmine puhastatud (Io) : 16A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 975mV @ 16A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 35ns
Praegune - vastupidine leke @ Vr : 10µA @ 150V
Mahtuvus @ Vr, F : 175pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett : TO-263AB
Töötemperatuur - ristmik : -65°C ~ 150°C

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