VS-8EWH06FNTR-M3 Hinnakujundus (USD) [190044tk Laos]
- 1 pcs$0.19463
- 2,000 pcs$0.17552
- Osa number:
- VS-8EWH06FNTR-M3
- Täpsem kirjeldus:
- DIODE GEN PURP 600V 8A DPAK. Rectifiers Hyperfast 8A 600V 18ns
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - TRIAC-d, Elektrijuhi moodulid, Türistorid - SCR, Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - RF, Transistorid - IGBT - massiivid, Transistorid - IGBT - üksikud and Transistorid - bipolaarsed (BJT) - RF ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division VS-8EWH06FNTR-M3 electronic components. VS-8EWH06FNTR-M3 can be shipped within 24 hours after order. If you have any demands for VS-8EWH06FNTR-M3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-8EWH06FNTR-M3 Toote atribuudid
Osa number :
VS-8EWH06FNTR-M3
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 600V 8A DPAK
Sari :
FRED Pt®
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
600V
Praegune - keskmine puhastatud (Io) :
8A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
2.4V @ 8A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
25ns
Praegune - vastupidine leke @ Vr :
50µA @ 600V
Mahtuvus @ Vr, F :
-
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
TO-252-3, DPak (2 Leads + Tab), SC-63
Tarnija seadme pakett :
D-PAK (TO-252AA)
Töötemperatuur - ristmik :
-65°C ~ 175°C
Viimased uudised
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VS-8EWH06FN-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A DPAK. Rectifiers 8A 600V 18ns Hyperfast
-
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