Vishay Semiconductor Diodes Division - FESB16DTHE3/45

KEY Part #: K6456171

FESB16DTHE3/45 Hinnakujundus (USD) [80677tk Laos]

  • 1 pcs$0.48466
  • 1,000 pcs$0.43923

Osa number:
FESB16DTHE3/45
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 200V 16A TO263AB. Rectifiers 16 Amp 200 Volt 35ns 250 Amp IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - SCR - moodulid, Transistorid - FET, MOSFET - RF, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Türistorid - DIAC-d, SIDAC-id, Dioodid - alaldid - massiivid, Transistorid - FET, MOSFET - üksikud, Transistorid - FET, MOSFET - massiivid and Transistorid - programmeeritav unijunktsioon ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division FESB16DTHE3/45 electronic components. FESB16DTHE3/45 can be shipped within 24 hours after order. If you have any demands for FESB16DTHE3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB16DTHE3/45 Toote atribuudid

Osa number : FESB16DTHE3/45
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 200V 16A TO263AB
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 200V
Praegune - keskmine puhastatud (Io) : 16A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 975mV @ 16A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 35ns
Praegune - vastupidine leke @ Vr : 10µA @ 200V
Mahtuvus @ Vr, F : 175pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett : TO-263AB
Töötemperatuur - ristmik : -65°C ~ 150°C

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