Vishay Semiconductor Diodes Division - VS-8EWS12STRR-M3

KEY Part #: K6434572

VS-8EWS12STRR-M3 Hinnakujundus (USD) [69518tk Laos]

  • 1 pcs$0.57233
  • 3,000 pcs$0.56949

Osa number:
VS-8EWS12STRR-M3
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 1.2KV 8A D-PAK. Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - FET, MOSFET - üksikud, Transistorid - FET, MOSFET - massiivid, Türistorid - SCR, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - FET, MOSFET - RF, Türistorid - SCR - moodulid and Türistorid - TRIAC-d ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division VS-8EWS12STRR-M3 electronic components. VS-8EWS12STRR-M3 can be shipped within 24 hours after order. If you have any demands for VS-8EWS12STRR-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-8EWS12STRR-M3 Toote atribuudid

Osa number : VS-8EWS12STRR-M3
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 1.2KV 8A D-PAK
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 1200V
Praegune - keskmine puhastatud (Io) : 8A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 8A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 50µA @ 1200V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63
Tarnija seadme pakett : D-PAK (TO-252AA)
Töötemperatuur - ristmik : -55°C ~ 150°C

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