Vishay Semiconductor Diodes Division - VS-HFA06TB120SL-M3

KEY Part #: K6434270

VS-HFA06TB120SL-M3 Hinnakujundus (USD) [100888tk Laos]

  • 1 pcs$0.38757

Osa number:
VS-HFA06TB120SL-M3
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 1.2KV 6A D2PAK. Diodes - General Purpose, Power, Switching 1200V 6A IF (TO-263AB) 80A IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - FET, MOSFET - RF, Transistorid - IGBT - massiivid, Dioodid - Zener - massiivid, Transistorid - IGBT-moodulid, Türistorid - SCR, Transistorid - programmeeritav unijunktsioon, Transistorid - bipolaarsed (BJT) - massiivid and Türistorid - DIAC-d, SIDAC-id ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division VS-HFA06TB120SL-M3 electronic components. VS-HFA06TB120SL-M3 can be shipped within 24 hours after order. If you have any demands for VS-HFA06TB120SL-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA06TB120SL-M3 Toote atribuudid

Osa number : VS-HFA06TB120SL-M3
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 1.2KV 6A D2PAK
Sari : HEXFRED®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 1200V
Praegune - keskmine puhastatud (Io) : 6A (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui : 3.9V @ 12A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 80ns
Praegune - vastupidine leke @ Vr : 5µA @ 1200V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett : TO-263AB (D²PAK)
Töötemperatuur - ristmik : -55°C ~ 150°C

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