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  1. Kodu
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  4. MODULE
  5. M391A4G43AB1-CVF

Samsung Semiconductor - M391A4G43AB1-CVF

KEY Part #: K7359841

[16677tk Laos]

    Osa number:
    M391A4G43AB1-CVF
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    DDR4 ECC UDIMM 32 GB 2R x 8 2933 Mbps 1.2 V 288 (2G x 8) x 18 Sample.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: GDDR5, SLC Nand, LPDDR3, MODULE, LPDDR4X, LPDDR5, GDDR6 and HBM Aquabolt ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor M391A4G43AB1-CVF electronic components. M391A4G43AB1-CVF can be shipped within 24 hours after order. If you have any demands for M391A4G43AB1-CVF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M391A4G43AB1-CVF Toote atribuudid

    Osa number : M391A4G43AB1-CVF
    Tootja : Samsung Semiconductor
    Kirjeldus : DDR4 ECC UDIMM 32 GB 2R x 8 2933 Mbps 1.2 V 288 (2G x 8) x 18 Sample
    Sari : DDR3
    DDR : DDR4
    tüüpi dIMM : ECC UDIMM
    tihedus : 32 GB
    Koht x Org. : 2R x 8
    kiirus : 2933 Mbps
    Pinge : 1.2 V
    Arv Pin : 288
    Component koosseis : (2G x 8) x 18
    toote staatus : Sample

    Viimased uudised

    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Mass Production of Fifth-Generation V-NAND has Started
    Inside the building blocks of the 5G future
    Samsung Z-SSD SZ985
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    5G and Memory - from Connected Thinking to Connected Living
    Mission Peak Reference Server System for NGSFF SSD
    High Bandwidth Memory is Catching on for Data-intensive Computing
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    How Will 5G Impact on Memory?
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samuti võite olla huvitatud
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      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

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      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

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      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

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      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

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      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

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      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    Kuumad osad