Vishay Semiconductor Diodes Division - NS8KTHE3_A/P

KEY Part #: K6442308

NS8KTHE3_A/P Hinnakujundus (USD) [3177tk Laos]

  • 1,000 pcs$0.26162

Osa number:
NS8KTHE3_A/P
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 800V 8A TO220AC.
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - Zener - üksikud, Transistorid - FET, MOSFET - üksikud, Dioodid - Zener - massiivid, Dioodid - sillaldid, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - FET, MOSFET - massiivid, Transistorid - eriotstarbelised and Transistorid - IGBT - üksikud ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division NS8KTHE3_A/P electronic components. NS8KTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NS8KTHE3_A/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NS8KTHE3_A/P Toote atribuudid

Osa number : NS8KTHE3_A/P
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 800V 8A TO220AC
Sari : Automotive, AEC-Q101
Osa olek : Obsolete
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 800V
Praegune - keskmine puhastatud (Io) : 8A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 8A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 10µA @ 800V
Mahtuvus @ Vr, F : 55pF @ 4V, 1MHz
Paigaldus tüüp : Through Hole
Pakett / kohver : TO-220-2
Tarnija seadme pakett : TO-220AC
Töötemperatuur - ristmik : -55°C ~ 150°C

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