SE10FJ-M3/I Hinnakujundus (USD) [1397927tk Laos]
- 1 pcs$0.02792
- 30,000 pcs$0.02778
- Osa number:
- SE10FJ-M3/I
- Täpsem kirjeldus:
- DIODE GEN PURP 600V 1A DO219AB. Rectifiers 1A 600V ESD Prot SMF Rectifier
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT-moodulid, Transistorid - JFET-id, Transistorid - bipolaarsed (BJT) - RF, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - eriotstarbelised, Dioodid - muutuva mahtuvusega (muutujad, varactors, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel and Dioodid - Zener - massiivid ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division SE10FJ-M3/I electronic components. SE10FJ-M3/I can be shipped within 24 hours after order. If you have any demands for SE10FJ-M3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SE10FJ-M3/I Toote atribuudid
Osa number :
SE10FJ-M3/I
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 600V 1A DO219AB
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
600V
Praegune - keskmine puhastatud (Io) :
1A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.05V @ 1A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
780ns
Praegune - vastupidine leke @ Vr :
5µA @ 600V
Mahtuvus @ Vr, F :
7.5pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-219AB
Tarnija seadme pakett :
DO-219AB (SMF)
Töötemperatuur - ristmik :
-55°C ~ 175°C
Viimased uudised
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