BAS19-G3-18 Hinnakujundus (USD) [2806764tk Laos]
- 1 pcs$0.01391
- 10,000 pcs$0.01384
- Osa number:
- BAS19-G3-18
- Täpsem kirjeldus:
- DIODE GEN PURP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching 120 Volt 200mA 50ns 2.5A IFSM
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - bipolaarsed (BJT) - RF, Türistorid - SCR, Transistorid - IGBT - üksikud, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Dioodid - sillaldid and Dioodid - alaldid - massiivid ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division BAS19-G3-18 electronic components. BAS19-G3-18 can be shipped within 24 hours after order. If you have any demands for BAS19-G3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS19-G3-18 Toote atribuudid
Osa number :
BAS19-G3-18
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 100V 200MA SOT23
Sari :
Automotive, AEC-Q101
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
100V
Praegune - keskmine puhastatud (Io) :
200mA
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.25V @ 200mA
Kiirus :
Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) :
50ns
Praegune - vastupidine leke @ Vr :
100nA @ 100V
Mahtuvus @ Vr, F :
5pF @ 0V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
TO-236-3, SC-59, SOT-23-3
Tarnija seadme pakett :
SOT-23
Töötemperatuur - ristmik :
-55°C ~ 150°C
Viimased uudised
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